Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure | Nanoscale Research Letters | Full Text
Semiconductor Junctions, Solid-Solid Junctions | SpringerLink
Metal-induced gap states - Wikiwand
Schottky barrier height difference ( b ) and band offsets (E c,v ) as a... | Download Scientific Diagram
Crystals | Free Full-Text | A Fundamental Reason for the Need of Two Different Semiconductor Technologies for Complementary Thin-Film Transistor Operations | HTML
Thickness-dependent Schottky barrier height of MoS 2 field-effect transistors - Nanoscale (RSC Publishing) DOI:10.1039/C7NR01501A
Professor Robert B. Laughlin, Department of Physics, Stanford University
Schottky barrier formation and band bending revealed by first- principles calculations | Scientific Reports
Schottky barrier - Wikipedia
a Schematic of the QW band structure, showing the well width d, the... | Download Scientific Diagram
Back contact barrier height (ΦBp) as a function of band gap and... | Download Scientific Diagram
Strain and Electric Field Controllable Schottky Barriers and Contact Types in Graphene-MoTe2 van der Waals Heterostructure | Nanoscale Research Letters | Full Text
Calculated bandgap and barrier height of Mg1−xZnxO as a function of Zn... | Download Scientific Diagram
How can we reduce the barrier height in metal-semiconductor contacts? - Quora
Energy band alignment with barrier heights at the as-grown (1.8 eV),... | Download Scientific Diagram
Potential Barrier Height - an overview | ScienceDirect Topics
How can we reduce the barrier height in metal-semiconductor contacts? - Quora
a) Band structure at the metal-semiconductor interface before the... | Download Scientific Diagram
Band offsets, Schottky barrier heights, and their effects on electronic devices: Journal of Vacuum Science & Technology A: Vol 31, No 5
MetalSemiconductor Contact EE 3406ECENUS Introduction Schottky Contact Ohmic
Schottky barrier height at metal/ZnO interface: A first-principles study - ScienceDirect
Band gap and Schottky barrier heights of multiferroic BiFeO3: Applied Physics Letters: Vol 90, No 13
The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory - ScienceDirect
Professor Robert B. Laughlin, Department of Physics, Stanford University
3.1.6.2 Schottky Contact
Schottky Diode
Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor | Scientific Reports
